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      2003 Dec 12 2 NXP Semiconductors Product data sheet Low-leakage diode BAS116 FEATURES ? Plastic SMD package ? Low leakage current: typ. 3 pA ? Switching time: typ. 0.8 μs ? Continuous reverse voltage: max. 75 V ? Repetitive peak reverse voltage: max. 85 V ? Repetitive peak forward current: max. 500 mA. APPLICATION ? Low leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode lumns 21 3 Top view MAM106 2 n.c. 1 3 Fig.1 Simplified outline (SOT23) and symbol. Marking code: JVp = made in Hong Kong; JVt = made in Malaysia; JVW = Made in China. ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS116 ? plastic surface mounted package; 3 leads SOT23 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage ? 85 V VR continuous reverse voltage ? 75 V IF continuous forward current see Fig.2; note 1 ? 215 mA IFRM repetitive peak forward current ? 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 μs ? 4 A tp = 1 ms ? 1 A tp = 1 s ? 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 ? 250 mW Tstg storage temperature ?65 +150 °C Tj junction temperature ? 150 °C |